型号: 厂商: 批号: 封装: |
型号 | 数量 | 厂商 | 批号 | 封装 | 更新时间 |
---|---|---|---|---|---|
1N4731A | 1000 | NXP/恩智浦 | 1032+ | DO-41 | 24-05-14 |
FDG327N MOS(场效应管) | 50 | FAIRCHILD/仙童 | 1045+ | SOT-363 | 24-05-14 |
XC2V250-5FGG256C 其他被动元件 | 79 | XILINX/赛灵思 | 1037+ | BGA | 24-05-14 |
6X14300042 | 1000 | TXC/台湾晶技 | 1312+ | SMD | 24-05-14 |
FDP8896 MOS(场效应管) | 200 | FAIRCHILD/仙童 | 1009+ | TO220 | 24-05-14 |
NCP1028P065G 其他被动元件 | 20 | ON/安森美 | 0648+ | DIP | 24-05-14 |
TRS3243EIRHBR | 75 | TI/德州仪器 | 10+ | QFN32 | 24-05-14 |
TRS3243EIPWR | 188 | TI/德州仪器 | 12+ | TSSOP28 | 24-05-14 |
TRS3243ECDBR | 20 | TI/德州仪器 | 14+ | SSOP28 | 24-05-14 |
TRS3243ECPWR | 135 | TI/德州仪器 | 09+ | TSSOP28 | 24-05-14 |
TRS3243CPWR | 50 | TI/德州仪器 | 10+ | TSSOP28 | 24-05-14 |
TMDS261BPAGR 保护IC | 13 | TI/德州仪器 | 14+ | QFP | 24-05-14 |
MTFC2GMVEA-0M WT 内存芯片 | 20 | MICRON/美光 | 1328+ | BGA | 24-05-14 |
SI4390DY-T1-E3 MOS(场效应管) | 100 | VISHAY/威世 | 07+ | SOP | 24-05-14 |
TB62736FUG 贴片二极管 | 15 | TOSHIBA/东芝 | 13+ | SOT-23 | 24-05-14 |
TLV62084DSGR 其他被动元件 | 50 | TI/德州仪器 | 15+ | WSON8 | 24-05-14 |
BSN20 | 133 | NXP/恩智浦 | 1215+ | SOT-23 | 24-05-14 |
BSN20 MOSFET或IGBT开关IC | 350 | NXP/恩智浦 | 0738+ | SOT-23 | 24-05-14 |
NJT4030PT1G | 50 | ON/安森美 | 0930+ | SOT223 | 24-05-14 |
NJT4030PT1G 三极管 | 24 | ON/安森美 | 0829+ | SOT223 | 24-05-14 |
BFG541 MOS(场效应管) | 184 | NXP/恩智浦 | 0929+ | SOT223 | 24-05-14 |
ISL9R1560S3ST MOS(场效应管) | 15 | FAIRCHILD/仙童 | 1141+ | TO263 | 24-05-14 |
TOP250Y 电源IC | 40 | POWER | 1316+ | TO220 | 24-05-14 |
GT31L16S2W80 | 88 | GENITOP | 1302+ | SOP | 24-05-14 |
SIS412DN-T1-GE3 MOS(场效应管) | 1164 | VISHAY/威世 | 12+ | QFN | 24-05-14 |
PBSS5480X | 700 | NXP/恩智浦 | 0652+ | SOT89 | 24-05-14 |
PBSS5480X 超小型管 | 480 | NXP/恩智浦 | 1436+ | SOT-89 | 24-05-14 |
T521X337M016ATE025 | 100 | KEMET/基美 | 13+ | SMD | 24-05-14 |
TLJR226M006X3500 | 100 | AVX | 0849+ | SMD | 24-05-14 |
STTH8R06D 整流器件 | 16 | ST/意法 | 1432+ | TO220 | 24-05-14 |
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